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IIT Guwahati-Led Team Innovates Ultra-Wide Bandgap Semiconductors

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A groundbreaking achievement led by researchers at IIT Guwahati promises a revolution in high-power electronics. Collaborating with IIT Mandi and TU Wien, the team has devised a cost-effective method to grow gallium oxide semiconductors. This advancement, published in IEEE Transactions on Electron Devices and Thin Solid Films, offers superior performance even in extreme temperatures, making it ideal for electric vehicles and high-voltage applications. With funding from SERB, this breakthrough marks a significant stride in power electronics.

Source: Indian Institute of Technology, Guwahati

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Written by RT team

The RT team is a diverse group of writers, analysts, and innovation enthusiasts united by a shared passion for the world of invention. With a collective experience spanning several years in technology, science, journalism, and innovation studies, they dedicate their skills to uncovering, understanding, and showcasing the most exciting advancements and trends in the industry.