RT team
RIR Power Electronics is set to establish India’s first Silicon Carbide (SiC) semiconductor production facility in Odisha, marking a significant milestone for the country’s semiconductor industry. Phase 1 of the project, focused on Epitaxy Wafer production, is expected to commence by December 2025.
With an investment of ₹618 crore, this initiative aims to strengthen India’s domestic semiconductor manufacturing under the Make in India initiative. The facility will produce high-power SiC-based MOSFETs and diodes, ranging from 3.3KV to 20KV, catering to critical industries.
SiC semiconductors are known for their high efficiency, durability, and superior power management capabilities. The new facility will play a crucial role in advancing key sectors such as electric vehicles, renewable energy, power electronics, and industrial automation. By leveraging cutting-edge SiC technology, the facility will contribute to enhanced energy efficiency and improved operational performance across multiple industries.
This strategic development underscores India’s commitment to boosting semiconductor manufacturing, reducing dependency on imports, and positioning itself as a global player in power electronics innovation.
